TPL COMMUNICATIONS B2-224 Silicon RF Power MOSFET Power Transistor 175 M

B2224 Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W B2-224

DESCRIPTION
RD70HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

FEATURES
1. Supply with Tape and Reel. 500 Units per Reel 2. Employing Mold Package
3. High Power and High Efficiency
Pout=75Wtyp Drain Effi.=64%typ 
@ Vds=12.5V Idq=1.0A Pin=5.5W   f=530MHz
Pout=84Wtyp Drain Effi.=74%typ
@ Vds=12.5V Idq=1.0A Pin=4.0W  f=175MHz
4. Integrated gate protection diode

APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

RoHS COMPLIANT
RD70HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders.
However it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders. (i.e. tin-lead solder alloys containing more than85% lead.)

B2-224 Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W B2224

11-03-2025 17:29:13 SSN18 U-0